1 2 10.2 0.2 1.3 0.2 8.9 0.3 0.8 0.1 5.0 0.5 1.3 0.1 2.2 0.3 1.4 0.2 4.5 0.2 15.8 0.5 0.4 0.1 2.5 0.25 pin 2.3 0.3 features mechanical data p o s i t i o n : a n y maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. units maximum recurrent peak reverse voltage v rrm v maximum w orking peak reverse voltage v r w m v maximum dc blocking voltage v dc v maximum average f orw ard total device 1 111 rectified current @ t c = 13 3 i f(av) a p e ak f o r w a r d s u r ge c u rr e nt 8 . 3 m s s i n gle h a lf b sine-w ave superimposed on rated load i fsm a maximum forw ard (i f =10a,t c =25 ) voltage per leg (i f =10a,t c =125 ) (note 1) (i f =20a,t c =25 ) (i f =20a,t c =125 ) maximum reverse current @t a =25 at rated dc blocking voltage @t a =125 maximum junction capacitance ( n o t e 2) c j pf operating junction temperature range t j storage temperature range t stg 2. v r =5v dc ,(test signal range 100khz to 1mhz 63 70 70 80 150.0 d 2 pak 20.0 90 10 0 49 56 70 80 90 100 mbr b 2070ct mbr b 20 80 ct mbr b 20 9 0ct mbr b 20100ct ma 0 . 70 0 . 9 5 0 . 8 5 0 . 1 n o t e : 1 . p u l s e t e s t: 3 0 0 s pu l s e w i d t h , 1% du t y c y c l e. - 5 5 - - -- + 17 5 - 5 5 - - -- + 15 0 v o l t a g e r a n g e: 70 - 10 0 v c urr e n t : 2 0 a metal silicon junction, majority carrier conduction. t e r m i na l s : l ea d s, s o l d e r a b l e per m i l - s t d - 75 0 , 11 m e t hod 2 0 26 dual s c ho tt ky r e c tifi e rs v 6.0 mbr b 20 70 ct - - - mbr b 20 10 0ct guard ring for over voltage protection. high surge capacity. f or use i n l ow vo lt age, hi g h f requency i nver t ers, f ree 111 wheelin g, and p olarit y p rotection a pp lications. p o l a r i t y : a s m ar k ed w e i gh t : 0.087 ounces,2.2 gram s high current capacity, low forward voltage drop. 400 v f 0 . 8 5 i r dimensions in millimeters case:jedec d 2 pak,molded plastic body diode semiconductor korea www.diode.kr
10 1 100 4 0 00 1 0 00 1 0 0 0 . 1 10 t j =25 f=1.0mhz vsig=50mvp-p 0 0 . 3 0 . 6 1 . 0 0 . 0 1 0 . 1 0 . 1 0 . 2 0 . 7 0 . 5 0 .4 0 .8 0 .9 1 . 1 1 .2 40 10 1 t j =125 t j =25 pulse width=300 mbr b 20 70 ct - - - mbr b 20 10 0ct fig.3 -- typical instantaneous forward 11111v characteri sti cs per leg fi g. 4 -- typi cal reverse characteri sti cs bn per leg 111 1 fi g. 5--typi cal juncti on capaci tance per leg case temperature percent of rated peak reverse voltage, r e ve r s e v o l t a g e , v o l t s junction capacitance, pf fi g. 1 -- forward current derati ng curve fig.2 -- maximum non-repetitive peak cc forward surge current perleg number of cycles at 60hz instantaneous forward voltage,volts www.diode.kr diode semiconductor korea
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